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Global GaN Semiconductor Devices Market 2014-2018

Research and Markets has announced the addition of the “Global GaN Semiconductor Devices Market 2014-2018”report to their offering.

GaN is a wide band gap semiconductor material. Its properties such as saturation velocity and high breakdown voltage make it an apt choice for high power applications in high-voltage switching devices such as radio frequency (RF) power amplifiers. The usage of GaN in semiconductor devices is cost-effective compared to silicon and gallium arsenide. GaN semiconductor devices are smaller, lighter, tougher, and more efficient than silicon semiconductor devices and are hence used to replace silicon in semiconductor devices. These devices find applications across several sectors such as Defense and Aerospace, Consumer Electronics, ICT, and Automotive.

The analysts forecast the Global GaN Semiconductor Devices Market to grow at a CAGR of 26.9 percent over the period 2013-2018.

This report covers the present scenario and the growth prospects of the Global GaN Semiconductor Devices market for the period 2014-2018. To calculate the market size, the report considers the revenue generated from the sales of GaN semiconductor devices worldwide. The report does not take into consideration the following while calculating the market size:

  • Support or maintenance services that are offered for/with GaN semiconductor devices
  • Components that are used in the production of GaN semiconductor devices
  • Aftermarket sales of GaN semiconductor devices

The report, the Global GaN Semiconductor Devices Market 2014-2018, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the APAC region, Europe, North America, and the ROW; it also covers the Global GaN Semiconductor Devices market landscape and its growth prospects in the coming years. The report also includes a discussion of the key vendors operating in this market.

One of the key trends in the market is the preference for the use of Gallium Nitride with different substrates. Silicon and non-silicon substrates and epitaxy layers can now be fused together to manufacture robust semiconductor devices.

According to the report, the key factor driving the market is the increased adoption of GaN substrates by high-power RF semiconductor device manufacturers. The worldwide expansion of the communication and network infrastructure, especially in emerging countries, is driving the demand for RF semiconductors, thereby increasing the demand for GaN semiconductor devices in the global market.

Further, the report states that one of the major challenges in this market is the huge capital investment required for manufacturers to effectively install and operate GaN semiconductor devices.

The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.

Source: PR Newswire

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