SANTA CLARA, Calif. — Intel provided the first details of its 14nm process technology, now qualified for volume production in an Oregon fab, and gave a sneak peak at Broadwell, its first CPU to use it.
Intel claims its 14nm process delivers a lower cost per transistor than its 22nm node thanks to aggressive area scaling using self-aligned double-patterning lithography. It said the process will enable a new class of x86-based 2-in-1 tablet/notebooks less than 9 mm thick that will be on store shelves before the end of the year.
Intel reserved details of Broadwell products until its annual developer forum in San Francisco next month. But it did give some specs for its 14nm FinFETs. Compared to Intel's 22nm process, it will have:
- 42nm fin pitch, down .70x
- 70nm gate pitch, down .78x
- 52nm interconnect pitch down .65x
- 42nm high fins, up from 34nm
- a 0.0588 micron2 SRAM cell, down .54x
- ~0.53 area scaling compared to 22nm
For the full story, see EBN sister site EE Times.
— Rick Merritt is the Silicon Valley Bureau Chief of EE Times .