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Richardson Introduces New Transistors From Microsemi

LAFOX, Ill. — Richardson RFPD, Inc. today announces immediate availability and full design support capabilities for a new family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radio frequency (RF) transistors from Microsemi Corporation (Microsemi).

The common source GaN on SiC transistors are internally-matched for optimal performance and specifically designed for S-band radar applications, making them easier to design-in than unmatched broadband devices. Peak output power levels range from 110-280W (Class AB), with high power gain and drain efficiency across the frequency band and under pulse conditions specified with a power supply of 60V. The devices utilize gold metallization and eutectic attach to provide the highest reliability and superior ruggedness.

Richardson RFPD, Inc.

{complink 3424|Microsemi Corp.}

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